Power Module/SiC Power Module
NXH010P120MNF1
ON Semiconductor1200V, 10mΩ SiC half-bridge module with integrated driver
RoHSIndustrial Grade
Technische Spezifikationen
Package
F1
Mounting
Through-Hole
Temperature Range
-40°C to +150°C
Grade
Industrial
Manufacturer
ON Semiconductor
Rds On
10mΩ
Weight
95g
Topology
Half-Bridge
Current Rating
150A
Voltage Rating
1200V
Isolation Voltage
2500V
Thermal Resistance
0.15°C/W
Anwendungen
EV ChargerSolar InverterUPS
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