Power Semiconductor/SiC Diode
IDH10G65C6
Infineon650V, 10A SiC Schottky diode with zero reverse recovery
RoHSIndustrial Grade
Technische Spezifikationen
Package
TO-220-2
Mounting
Through-Hole
Temperature Range
-55°C to +175°C
Grade
Industrial
Manufacturer
Infineon
Current Rating
10A
Voltage Rating
650V
Forward Voltage
1.7V
datasheet local
NOT_FOUND
datasheet source
no_scraper_match
Junction Capacitance
60pF
Reverse Recovery Time
0ns
Reverse Recovery Charge
0μC
Certifications
AEC-Q101
Anwendungen
IndustrialPower SupplySolar
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