GaN Transistor/GaN Transistor
QPD1009-TR
QorvoGaN HEMT Transistor, 28V, 10W, 2.5-2.7GHz
RoHSCommercial Grade
Technische Spezifikationen
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Gain
16 dB
Power
10 W
Voltage
28 V
Category
RF Power Transistor
Frequency
2.5-2.7 GHz
Anwendungen
telecomindustrial
Kompatible Alternativen
Other components in the GaN Transistor category — verify compatibility before substitution