Power Semiconductor/SiC MOSFET
SCTH30N120G2-4
ROHM1200V, 30A SiC MOSFET with fast body diode
RoHSIndustrial Grade
Technische Spezifikationen
Package
TO-247-4
Mounting
Through-Hole
Temperature Range
-55°C to +175°C
Grade
Industrial
Manufacturer
ROHM
Rds On
120mΩ
Gate Charge
32nC
Current Rating
30A
Voltage Rating
1200V
datasheet local
NOT_FOUND
Input Capacitance
1100pF
datasheet source
no_scraper_match
Certifications
AEC-Q101
Anwendungen
IndustrialUPS
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