UT8MC1M
CobhamRadiation-hardened 1Mb magnetoresistive random-access memory
Technische Spezifikationen
Package
CQFP48
Mounting
SMD
Temperature Range
-55°C to +125°C
Grade
Space
Manufacturer
Cobham
Density
1 Mb
Endurance
1E12 cycles
Access Time
35 ns
Organization
128K x 8
datasheet local
NOT_FOUND
datasheet source
no_scraper_match
Total Ionizing Dose
1 Mrad(Si)
Single Event Latchup
>120 MeV·cm²/mg
Certifications
Anwendungen
NATO Stock Numbers (NSN)
MICROCIRCUIT, MEMORY, SRAM, RAD HARD, 1M X 8
MICROCIRCUIT, MEMORY, RADIATION HARDENED SRAM, 1MBIT
MICROCIRCUIT, MEMORY, SRAM, RAD HARD, 1MB, SPACE QUALIFIED
MICROCIRCUIT,MEMORY, RADIATION HARDENED SRAM, 1MB
MICROCIRCUIT, MEMORY, SRAM, RADIATION HARDENED, 1MB
Kompatible Alternativen
Other components in the Memory category — verify compatibility before substitution
Cobham
Renesas
Winbond
Infineon/Cypress
Microchip
Infineon/Cypress
Infineon/Cypress
Microchip