GaN Transistor/GaN Transistor
QPD1210-TR7
QorvoGaN HEMT Transistor, 28V, 10W, 1.2-1.4GHz, Tape & Reel
RoHSCommercial Grade
Spécifications Techniques
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Gain
18 dB
Power
10 W
Voltage
28 V
Category
RF Power Transistor
Frequency
1.2-1.4 GHz
Applications
telecomindustrial
Alternatives Compatibles
Other components in the GaN Transistor category — verify compatibility before substitution