GaN Transistor/RF Power Transistor
QPD1012-TR7
QorvoGaN-on-SiC HEMT Transistor, 12W, 2.6-3.8GHz
RoHSCommercial Grade
Technische Spezifikationen
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Vds
50 V
Gain
17 dB
Power
12 W
Frequency
2.6-3.8 GHz
Subcategory
RF Power Transistor
Anwendungen
telecomindustrial
Kompatible Alternativen
Other components in the GaN Transistor category — verify compatibility before substitution