GaN Transistor/RF Power Transistor
QPD2015-TR7
QorvoGaN-on-SiC HEMT Transistor, 28V, 15W, 2.0-2.2GHz
RoHSCommercial Grade
Technische Spezifikationen
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Vds
28 V
Gain
14 dB
Pout
15 W
Frequency
2.0-2.2 GHz
Subcategory
RF Power Transistor
Anwendungen
telecomindustrial
Kompatible Alternativen
Other components in the GaN Transistor category — verify compatibility before substitution