GaN Transistor/RF Power Transistor
QPD1025L-TR7
QorvoGaN-on-SiC HEMT Transistor, 28V, 25W, 2.5-2.7GHz
RoHSCommercial Grade
Spécifications Techniques
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Vds
28 V
Gain
13 dB
Pout
25 W
Frequency
2.5-2.7 GHz
Subcategory
RF Power Transistor
Applications
telecomdefense
Alternatives Compatibles
Other components in the GaN Transistor category — verify compatibility before substitution