GaN Transistor/RF Power Transistor
QPD2022-TR7
QorvoGaN-on-SiC HEMT Transistor, 28V, 22W, 2.0-2.2GHz
RoHSCommercial Grade
Spécifications Techniques
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Vds
28 V
Gain
13 dB
Pout
22 W
Frequency
2.0-2.2 GHz
Subcategory
RF Power Transistor
Applications
telecomdefense
Alternatives Compatibles
Other components in the GaN Transistor category — verify compatibility before substitution