GaN Transistor/RF Power Transistor
QPD1001-TR7
QorvoGaN-on-SiC HEMT Transistor, 28V, 1W, 2.7-3.1GHz
RoHSCommercial Grade
Spécifications Techniques
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Vds
28 V
Gain
18 dB
Pout
1 W
Frequency
2.7-3.1 GHz
Subcategory
RF Power Transistor
Applications
telecomindustrial
Alternatives Compatibles
Other components in the GaN Transistor category — verify compatibility before substitution