GaN Transistor/RF Power Transistor
QPD1008-TR7
QorvoGaN-on-SiC HEMT Transistor, 8W, 2.7-3.8GHz
RoHSCommercial Grade
Spécifications Techniques
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Vds
50 V
Gain
16.5 dB
Power
8 W
Frequency
2.7-3.8 GHz
Subcategory
RF Power Transistor
datasheet local
NOT_FOUND
datasheet source
no_scraper_match
Applications
telecomindustrial
Alternatives Compatibles
Other components in the GaN Transistor category — verify compatibility before substitution