GaN Transistor/RF Power Transistor
QPD1020-TR7
QorvoGaN-on-SiC HEMT Transistor, 28V, 20W, 2.5-2.7GHz
RoHSCommercial Grade
Technical Specifications
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Vds
28 V
Gain
13.5 dB
Pout
20 W
Frequency
2.5-2.7 GHz
Subcategory
RF Power Transistor
Applications
telecomdefense
Compatible Alternatives
Other components in the GaN Transistor category — verify compatibility before substitution