GaN Transistor/RF Power Transistor
QPD2003-TR7
QorvoGaN-on-SiC HEMT Transistor, 28V, 3W, 2.0-2.2GHz
RoHSCommercial Grade
Spécifications Techniques
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Vds
28 V
Gain
17 dB
Pout
3 W
Frequency
2.0-2.2 GHz
Subcategory
RF Power Transistor
datasheet local
NOT_FOUND
datasheet source
no_scraper_match
Applications
telecomindustrial
Alternatives Compatibles
Other components in the GaN Transistor category — verify compatibility before substitution