GaN Transistor/RF Power Transistor
QPD2008-TR7
QorvoGaN-on-SiC HEMT Transistor, 8W, 5.0-6.0GHz
RoHSCommercial Grade
Spécifications Techniques
Package
DFN-8
Mounting
SMD
Temperature Range
-40°C to +85°C
Grade
Commercial
Manufacturer
Qorvo
Vds
50 V
Gain
12.5 dB
Power
8 W
Frequency
5.0-6.0 GHz
Subcategory
RF Power Transistor
Applications
telecomdefense
Alternatives Compatibles
Other components in the GaN Transistor category — verify compatibility before substitution